| PART |
Description |
Maker |
| Q62702-F1042 BF554 |
From old datasheet system
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier/ mixer and oscillator circuits)
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits) NPN硅射频晶体管（对于一般的小信号射频应用在放大器，混频器和振荡器电00兆赫
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BYM12-100/25 BYM12-150/26 BYM12-300-HE3 BYM12-300/ |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC, GL41, 2 PIN
1 A, 150 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC, GL41, 2 PIN
1 A, 300 V, SILICON, SIGNAL DIODE, DO-213AB
|
Vishay Beyschlag
VISHAY SEMICONDUCTORS
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| 2SJ486ZU-TL-E 2SJ486ZU-TR-E 2SJ486 |
300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SC-59A, MPAK-3
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| 1N6639US 1N6639 1N6641US 1N6641 1N6640US 1N6640 |
300 mAmp 75-100 Volts 4 nsec Computer Switching Diode 0.3 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1H4 1H5 |
HIGH EFFICIENCY RECTIFIER 1 A, 300 V, SILICON, SIGNAL DIODE
HIGH EFFICIENCY RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE
|
Rectron Semiconductor
|
| NTE6359 NTE6355 NTE6362 |
300 A, 1000 V, SILICON, RECTIFIER DIODE
300 A, 400 V, SILICON, RECTIFIER DIODE
300 A, 1400 V, SILICON, RECTIFIER DIODE
|
|
| SF18 SF12-AP SF12-BP SF14-AP SF16-AP |
1.0 Amp Super Fast Recovery Rectifiers 50 to 600 Volts
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components
|
| MUR1660CT MUR1640CT MUR1630CT |
16 Amp Super Fast Glass Pass ivated Rectifier 300 to 600 Volts 16 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| UMA5817 UMA5818 UMA5819 MA5817 MVUMA5819 MQUMA5817 |
1 A, 40 V, SILICON, SIGNAL DIODE
ULTRAMITTE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 1 A, 30 V, SILICON, SIGNAL DIODE
1 A, 20 V, SILICON, SIGNAL DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
| 2N7002ZG-AE2-R 2N7002ZG-AL6-R 2N7002ZG-AL3-R |
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 HALOGEN FREE PACKAGE-3
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET HALOGEN FREE PACKAGE-6
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET HALOGEN FREE PACKAGE-3
|
Unisonic Technologies Co., Ltd.
|
|
